Highly Linear Active Feedback Noise Cancelling Wideband Low Noise Amplifier for Next Generation RF Frontend using 0.18µm CMOS

Abstract

Next generation wireless terminal should support multiple standards (UMTS, WiMAX, LTE, IEEE
802.11a/b/g, Zig-Bee, Bluetooth etc.), receive multiple frequency bands, and allow any modulation scheme. So, Next
generation RF (Radio Frequency) Frontend requires wideband with multiple standards support. RF Frontend relaxes
tough requirements (dynamic range, speed, noise performance and linearity) of Baseband A/D converter. An LNA (Low
Noise Amplifier) of RF Frontend relaxes the noise performance and dynamic range requirements by amplifying weak
received signal with adding minimum noise to improve signal to noise ratio.
This paper we have design and simulate 2-7Ghz wideband Low Noise amplifier for next generation RF frontend receiver
using 0.18µm CMOS technology. The proposed technique exploits the complementary characteristics of NMOS and
PMOS to improve the linearity performance. A two-stage Wideband LNA is optimized to achieve high linearity with high
gain and low NF over the 2-7 GHz range. The first stage espouse inverter topology with resistive and common drain
active feedback to provide high linearity, wideband input matching and noise cancelling, whereas the second stage is a
cascode amplifier with series and shunt inductive peaking techniques to extend the bandwidth and achieve high gain
simultaneously. The proposed Wideband LNA demonstrate a gain of 12.7-15.6 dB within the entire band, a noise figure
of 2-4 dB, and an IIP3 is greater than 8dBm in entire band and 17dBm maximum at 5GHz while consuming 20 mw from
a 1.8 V power supply. The simulated input return loss is below −8 dB, and the output return loss is −8 dB, from 2-7 GHz.
Its shows that the design achieve comparable good performance compare to published work in wideband LNA.