ELECTROMAGNETIC PULSEWEAPON TECHNOLOGY ALONG WITH EMP SHIELDING AND DETECTION METHODOLOGY

Authors

  • K. Hemapriya Assistant Professor Department of CSE, Panimalar Institute of Technology, Chennai
  • F.Maria Claret Punitha Department of CSE, Panimalar Institute of Technology, Chennai
  • S.Barkavi Department of CSE, Panimalar Institute of Technology, Chennai
  • R.Swathi Department of CSE, Panimalar Institute of Technology, Chennai

Keywords:

component; electronic device; lightning surge Pulse ;nanosecond square pulse; failure

Abstract

In the high technology condition, the weapon safety and survive capability is severely
threatened by the complicated and changeable electromagnetic environment, especially for
the electromagnetic field produced by HPM and ESD high rise current pulse. Electronic
devices are gradually sensitive to the high electromagnetic pulse as the reducing
characteristic size, increasing integrated degree, reducing power consumption ,increasing
working band and so on. It’s significant to study the damage and failure mechanism of
electronic devices under high power electromagnetic field (HPEM) either for the civilian use
or for the military application. The damage effect of typical electronic devices including
diode, transistor, and digital integrated circuits under lightning surge pulse and nano-second
square pulse is studied in this article. The damage law of various electronic devices under
different pulse width is obtained, and the damage and failure mechanism of each device
under different pulse power is analyzed, and some defending suggestion is proposed in the
end of the article.

Published

2016-03-25

How to Cite

K. Hemapriya, F.Maria Claret Punitha, S.Barkavi, & R.Swathi. (2016). ELECTROMAGNETIC PULSEWEAPON TECHNOLOGY ALONG WITH EMP SHIELDING AND DETECTION METHODOLOGY. International Journal of Advance Research in Engineering, Science & Technology, 5(3), 294–302. Retrieved from https://ijarest.org/index.php/ijarest/article/view/1209